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Abstract

A plasma reactor and accompanying method for thin film deposition is disclosed, comprising a system of input means and exhaust means that produce an adjustable spiral flow of precursor gas used in creating a spatially stable plasma over large substrate surface areas. The flow of gas created by this configuration of input and exhaust means results in a plasma that remains uniform as it extends radially from the center to the edges of the substrate and is capable of high quality depositions and high deposition rates. In a preferred embodiment, the input means is in the form of a ring jet with a tangential flow component surrounding the substrate. Gas exhausts through exhaust means located at a preselected distance above the substrate. In a preferred embodiment, gas exhausts through a central exhaust aperture and a number of surrounding apertures located at a preselected distance from the central exhaust aperture. Both the central and surrounding exhaust apertures may be connected by an adjustable manifold to allow for coordinated positioning of the central and surrounding apertures. Additionally, apertures located at the bottom of the cavity can be used to input additional precursor gas so as to maintain the spiral flow over the substrate.

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First Claim