Avalanche photodiodes with an impact-ionization-engineered multiplication region
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United States of America Patent
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May 16, 2006
Grant Date -
Mar 13, 2003
app pub date -
Oct 1, 2001
filing date -
Sep 29, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An avalanche photodiode including a multiplication layer is provided. The multiplication layer may include a well region and a barrier region. The well region may include a material having a higher carrier ionization probability than a material used to form the barrier region.
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