Method for forming a self-aligned silicide of a metal oxide semiconductor
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United States of America Patent
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May 25, 2004
Grant Date -
Apr 10, 2003
app pub date -
Jul 3, 2002
filing date -
Oct 9, 2001
priority date (Note) -
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Abstract
The present invention discloses a method for forming a self-aligned silicidation of a metal oxide semiconductor. The feature of the present invention is to perform an ionic implanting step before carrying on the self-aligned silicidation. The implanted ion of the present invention, such as fluorine, chlorine, bromine, iodine, boron and trifluroborane, will react with the silicon on the surface of the gate structure and the silicon substrate and a barrier effect will be formed during silicidation. Therefore, a spike phenomenon because of the penetration of cobalt or the cobalt silicide into the gate structure or the source/drain regions is prevented. The junction leakage current and the breakdown voltage of the metal oxide semiconductor are avoided.
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