Stacked capacitor and method for fabricating the same
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United States of America Patent
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N/A
Issued Date -
Apr 24, 2003
app pub date -
Sep 13, 2002
filing date -
Sep 14, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A stacked capacitor on a contact plug of a semiconductor substrate and the method for fabricating the same. A cylindrical conductive layer is formed upon a contact plug of a semiconductor substrate as a lower electrode of a stacked capacitor and there is an opening in the cylindrical conductive layer. A barrier layer is deposited inside the opening of the cylindrical conductive layer and fills a portion of the opening. A capacitor dielectric layer is deposited on the cylindrical conductive layer and on the barrier layer and an upper electrode layer is formed on the capacitor dielectric layer to complete the stacked capacitor.
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