Programmable resistance memory element and method for making same
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United States of America Patent
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app pub date -
Oct 10, 2002
filing date -
Oct 1, 1997
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Abandoned
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Abstract
A programmable resistance memory element. The active volume of memory material is made small by the presence of a small area of contact between the conductive material and the memory material. The area of contact is created by forming a region of conductive material and an intersecting sidewall layer of the memory material. The region of conductive material is preferably a sidewall layer of conductive material.
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