Method of etching conductive layers for capacitor and semiconductor device fabrication
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United States of America Patent
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Issued Date -
Apr 24, 2003
app pub date -
Jul 31, 2002
filing date -
Jul 31, 2001
priority date (Note) -
Abandoned
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Abstract
A method of etching a multi-layer film, wherein the multi-layer film comprises at least one conductive layer and a ferroelectric layer formed sequentially on a substrate comprises forming a hard mask on at least one of the at least one conductive layers. The hard mask is used to etch the first conductive layer and the ferroelectric layer at a temperature that may exceed 100 degrees. A semiconductor device comprises first electrodes formed on a substrate, ferroelectric portions formed on the first electrodes, second electrodes formed on the ferroelectric portions, and hard masks formed on the second electrode.
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