DBR comprising GaP, and use thereof in a semiconductor resonant cavity device
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United States of America Patent
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Issued Date -
May 8, 2003
app pub date -
Sep 26, 2002
filing date -
Sep 27, 2001
priority date (Note) -
Abandoned
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Abstract
A special type of Distributed Bragg Reflectors (DBRs) is provided. Semiconductor resonant cavity devices for emitting or absorbing light are also provided. A DBR is provided for reflecting radiation with a wavelength .lambda. includes at least one mirror pair. Each mirror pair comprises a bottom layer and a top layer, the top layer of one mirror pair comprising gallium phosphide (GaP) and having an optical thickness of substantially an odd multiple of .lambda./4. A resonant cavity device for emitting or absorbing light with a wavelength .lambda. may comprise a first mirror and a second mirror with an active region located therebetween. The second mirror may comprise a stack of DBRs including at least one mirror pair, the mirror pair having at least a top layer and a bottom layer. The top layer is the layer most remote from the first mirror, and this layer is essentially composed of gallium phosphide (GaP) and has an optical thickness of substantially an odd multiple of .lambda./4. A method of manufacturing a resonant cavity device for emitting or absorbing light with a wavelength .lambda. is also provided.
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