Manufacturing method of semiconductor device
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United States of America Patent
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N/A
Issued Date -
Jun 5, 2003
app pub date -
Oct 30, 2002
filing date -
Dec 5, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention provides a manufacturing method of a semiconductor device, in which a main insulating film whose relative dielectric constant is drastically reduced can be formed on a barrier insulating film that covers wirings mainly consist of copper film. The configuration of the method is that film forming gas containing either siloxane or methylsilane, oxygen-containing gas, and etching gas, is transformed into plasma to cause reaction so as to form an insulating film 35b having low dielectric constant on a substrate 21 subject to deposition.
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