Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure
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United States of America Patent
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Sep 9, 2003
Grant Date -
Jun 26, 2003
app pub date -
Dec 21, 2001
filing date -
Dec 21, 2001
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Abstract
Graded semiconductor layers between GaN and AlGaN layers in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.
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