Methods of forming nitride films
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United States of America Patent
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Aug 16, 2005
Grant Date -
Jun 26, 2003
app pub date -
Sep 13, 2002
filing date -
Sep 15, 2001
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Abstract
A silicon nitride film, for example, is deposited by introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the silicon and nitrogen to react to form a silicon nitride film on a surface adjacent the plasma region. The thus deposited film may then be subjected to an activation anneal.
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