Polishing pad for a chemical mechanical planarization or polishing (CMP) system
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United States of America Patent
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Issued Date -
Jul 24, 2003
app pub date -
Jan 24, 2002
filing date -
Jan 24, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A polishing pad for a chemical mechanical planarization or polishing (CMP) system has a polish rate responsive to the pad contact area and the pad contact dynamics. The pad contact area is characterized by a predetermined statistical distribution. The pad contact dynamics are characterized by a mechanical behavior.
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