Method for fabricating silicone single crystal
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United States of America Patent
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N/A
Issued Date -
Jul 31, 2003
app pub date -
Nov 8, 2002
filing date -
Feb 16, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The invention provides a method of producing silicon single crystals which comprises using the CZ method under application of a magnetic field to the silicon melt and under application of an electric current containing a component perpendicular to this magnetic field, namely using the EMCZ method, adjusting the pulling rate in the process of single crystal growth and thereby growing a single crystal under conditions such that the outside diameter of the potential region of the ring-forming oxidation-induced stacking faults (R-OSF) occurring in the cross section of the crystal is within the range of 70% to 0% of the crystal diameter. By this, wafers for semiconductors excellent in device characteristics such as gate oxide integrity or the like can be produced with high productivity without formation of COPs with not less than 0.1 .mu.m in size, or of dislocation clusters.
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