Diode

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20030141565A1
SERIAL NO

10055975

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A diode of the present invention has a Si substrate, a Si film of a first conductivity type laminated on this Si substrate, and a SiGe film of a second conductivity type laminated on this first conductivity type Si film.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI HEAVY INDUSTRIES LTD2-3 MARUNOUCHI 3-CHOME CHIYODA-KU TOKYO 1008332 ?1008332
SANSHA ELECTRIC MANUFACTURING CO LTD3-1-56 NISHIAWAJI HIGASHIYODOGAWA-KU OSAKA-SHI OSAKA 5330031

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirose, Fumihiko Yokohama, JP 16 88
Souda, Yutaka Toyonaka, JP 11 129

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