Method of depositing low dielectric constant silicon carbide layers
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United States of America Patent
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Feb 15, 2005
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N/A
app pub date -
Feb 25, 2003
filing date -
Feb 23, 2001
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Abstract
A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.
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