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Abstract

A radiation-emitting semiconductor component with a vertical emission direction, has a substrate, a first reflector layer, and a semiconductor layer sequence based on InGaN disposed on the first reflection layer. The semiconductor layer sequence contains a radiation-generating active layer. A second reflector layer is disposed on the semiconductor layer sequence and forms, together with the first reflector, a resonator disposed vertically with respect to the main direction of extent of the semiconductor layer sequence and whose axis represents the vertical emission direction of the semiconductor component. The second reflector layer is at least partly transmissive for radiation generated by the active layer and the radiation is coupled out through the second reflector layer. The substrate contains an electrically conductive material. The first reflector layer is a doped, epitaxially grown, distributed Bragg reflector layer, so that a simple electrical contact connection of the semiconductor component is possible without complex construction.

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