Variable resistance memory and method for sensing same
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United States of America Patent
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Aug 30, 2005
Grant Date -
Sep 11, 2003
app pub date -
Mar 5, 2002
filing date -
Mar 5, 2002
priority date (Note) -
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status (Latency Note)
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Abstract
A sense circuit and method for reading a resistance level of a programmable conductor memory element are provided. All rows and columns in a given memory array are initially held to the same potential. A desired row line is enabled by bringing it to approximately ground. The difference in voltage potential across a diode circuit of a selected cell activates the diodes and initiates current flow through the desired memory element of the desired cell. A column line associated with the cell is discharged from a precharge value through the diode circuit and memory element. The discharging voltage at the column line is compared with a reference voltage. If the voltage at the column line is greater than the reference voltage, then a high resistance level is detected, and, if the column line voltage is less than the reference voltage, a low resistance level is detected.
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