Semiconductor device having a capacitor and method for the manufacture thereof
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United States of America Patent
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app pub date -
Apr 14, 2003
filing date -
Jul 6, 2000
priority date (Note) -
Abandoned
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Abstract
A semiconductor device for use in a memory cell including an active matrix provided with a transistor and a first insulating layer formed around the transistor; a capacitor structure, formed on top of the first insulating layer and composed of a bottom electrode, a capacitor thin film placed on top of the bottom electrode and a top electrode formed on top of the capacitor thin film; a second insulating layer formed on top of the transistor and the capacitor structure; a metal interconnection formed on top of the second insulating layer and the active matrix to electrically connect the transistor to the capacitor structure; and a hydrogen barrier layer formed on top of the metal interconnection, wherein the hydrogen barrier layer is made of an aluminum oxide (Al.sub.xO.sub.y) layer.
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