Plasma processing apparatus and plasma processing method
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United States of America Patent
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Issued Date -
Sep 18, 2003
app pub date -
Mar 12, 2003
filing date -
Mar 14, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A plasma processing apparatus and a plasma processing method preferably used when processing a wafer by means of plasma etching, able to prevent contamination of a wafer or a chamber. The plasma processing apparatus converts a process gas into plasma, sprays the process gas from a spray nozzle 24a to a wafer 2 installed on an XYZ table 28, and processes the wafer 2. As the process gas, use is made of a mixture of SF.sub.6 (sulfur hexafluoride) gas, Ar (Argon) gas, and O.sub.2 (oxygen) gas, and the volume ratio of the O.sub.2 (oxygen) gas to the SF.sub.6 gas is in a range from 11% to 25%.
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