Method and apparatus to facilitate test pattern design for model calibration and proximity correction
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United States of America Patent
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Issued Date -
Oct 9, 2003
app pub date -
Apr 4, 2002
filing date -
Apr 4, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
By using a test pattern that has been corrected according to an optical model to prepare test wafers, better data can be obtained for calibrating the optical model. As a result: fewer measurements need to be taken from the wafer to calibrate the model and the measurements that are taken are more valuable because they better assist in calibrating the model. Embodiments of the invention include data comprising the corrected test pattern, masks including the corrected test pattern, and methods and apparatuses for using the modified test pattern. Additionally, by taking more measurements closer to the target dimensions, more information is available for performing optical proximity correction of layouts. Another benefit includes increased ease of model accuracy determinations.
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