Semiconductor device having ferroelectric capacitor and method for manufacturing the same
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United States of America Patent
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Jul 13, 2004
Grant Date -
Nov 6, 2003
app pub date -
May 30, 2003
filing date -
Mar 10, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A lower electrode is formed on an insulating film on a semiconductor substrate. A pair of ferroelectric films are formed on the lower electrode separately from each other. An upper electrode is formed on each of the pair of ferroelectric films. A portion of the lower electrode on which the ferroelectric film is formed is thicker than a portion thereof on which the ferroelectric film is not formed. Such a structure is obtained by sequentially depositing the lower electrode, the ferroelectric film, and the upper electrode on the insulating film, forming a mask on the upper-electrode, using this mask to etch the upper-electrode and the ferroelectric film to thereby pattern a pair of upper electrodes and a pair of ferroelectric electrodes, forming such a mask that continuously covers the pair of upper electrodes and the pair of ferroelectric films, and then etching the lower-electrode material film.
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