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Abstract

A thin-film capacitor device for performing temperature compensation is manufactured by layering a first dielectric thin-film and a second dielectric thin-film, wherein the second dielectric thin-film has a thickness t.sub.N, wherein t.sub.N ={.epsilon..sub.0.tau..sub.t0t /(C/S)}.multidot.{1/(.tau./.kappa.)}, wherein C/S represents a sheet capacitance, .epsilon..sub.0 represents the dielectric constant of vacuum, .tau..sub.t0t represents a desired temperature coefficient of capacitance, .tau. represents the temperature coefficient of capacitance of the second dielectric thin-film, and .kappa. represents the relative dielectric constant of the second dielectric thin-film, a target value of a grain size of the second dielectric thin-film is determined by selecting the grain size satisfying the formula (.tau./.kappa.)/(.tau..sub.g /.kappa..sub.g)>1, wherein .tau..sub.g represents the temperature coefficient of capacitance of the principal crystal grain, and .kappa..sub.g represents relative dielectric constant of the principal crystal grain, and the second dielectric thin-film is deposited so that the grain size becomes the target value.

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