Method for producing a positively doped semiconductor with large forbidden band
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United States of America Patent
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Aug 22, 2006
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Jun 5, 2003
filing date -
Dec 7, 2000
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Abstract
A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.
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