Wear leveling techniques for flash EEPROM systems

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6850443
APP PUB NO 20030227804A1
SERIAL NO

10428422

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A mass storage system made of flash electrically erasable and programmable read only memory ('EEPROM') cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend the service lifetime of the memory system. Since this type of memory cell becomes unusable after a finite number of erase and rewrite cycles, although in the tens of thousands of cycles, uneven use of the memory banks is avoided so that the entire memory does not become inoperative because one of its banks has reached its end of life while others of the banks are little used. Relative use of the memory banks is monitored and, in response to detection of uneven use, have their physical addresses periodically swapped for each other in order to even out their use over the lifetime of the memory.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES INC.;WESTERN DIGITAL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gupta, Anil Irvine, CA 95 5025
Lofgren, Karl M J Newport Beach, CA 23 3344
Norman, Robert D San Jose, CA 136 11962
Thelin, Gregory B Garden Grove, CA 29 4519

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