Method of determining nitrogen concentration within a wafer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 24, 2005
Grant Date -
Jan 1, 2004
app pub date -
Jun 28, 2002
filing date -
Jun 28, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An improved method of determining the concentration of nitrogen within a wafer is provided. At least a portion of the nitrogen within the wafer is initially gettered to a gettering site. In order prevent the in-diffusion of nitrogen, a barrier layer is generally deposited upon the wafer prior to gettering the nitrogen within the wafer. The nitrogen is then measured at the gettering site. The concentration of nitrogen within the wafer is then determined based upon the measurement of nitrogen at the gettering site and the diffusion coefficient for nitrogen. In this regard, the diffusion coefficient of nitrogen permits the measurement of nitrogen at the gettering site to be translated into a measurement of the concentration of nitrogen throughout the entire wafer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully