Electronic device having a diffusion barrier region including aluminum and a method of manufacture therefor
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United States of America Patent
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app pub date -
Jul 1, 2003
filing date -
Jan 8, 2001
priority date (Note) -
Abandoned
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Abstract
The present invention provides an electronic device having superior qualities. The electronic device includes an active region located over a substrate and an undoped layer located over the active region. The electronic device further includes a doped upper cladding layer located over the undoped layer, wherein a diffusion barrier region including aluminum is located between the undoped layer and the doped upper cladding layer. In an exemplary embodiment of the invention, the diffusion barrier region is a diffusion barrier layer or a number of diffusion barrier layers located between a plurality of the undoped layers.
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