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Abstract

A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 .mu.m is not more than 15 counts/cm.sup.2 after repeating the SC-1. More preferably, a silicon single crystal wafer having a nitrogen concentration of 1.times.10.sup.13-1.times.10.sup.15 atoms/cm.sup.3 provides a surface density of not more than 1 counts/cm.sup.2 for the particles having a diameter of not less than 0.12 .mu.m even after repeating the SC-1. Hence, a high quality wafer optimally used for a particle monitor can be obtained and a very small number of defects in the wafer make it possible to produce devices.

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First Claim