Importance

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Abstract

The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semiconductor substrate or liquid crystal substrate. The ozone treatment apparatus 1 includes: a placement table 20 on which the substrate K is placed; a heating unit for heating the substrate K placed on the placement table 20; an opposed plate 40, disposed opposite the substrate K, for discharging the ozone gas through a discharge port 44 formed in a surface facing the substrate K, a gas feeding means 43 for feeding the ozone gas into the discharge port 44; a lifter 30 for moving the placement table 20 up and down; and a control unit 35 for controlling the operation of said lifter 30. During the discharge of the ozone gas, the control unit 35 operates the lifter 30 so as to vary the spacing g between the opposed plate 40 and the substrate K placed on the placement table 20.

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First Claim