Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
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United States of America Patent
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Oct 25, 2005
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Aug 28, 2002
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Aug 28, 2002
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Abstract
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include organo-amine ligands and one or more precursor compounds that include organo-oxide ligands.
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