Importance

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Abstract

A package for encasing one or more semiconductor devices includes a composite base component with opposing first and second surfaces formed from a mixture of metallic powders. A first metallic powder is copper or a copper-base alloy and a second metallic powders is a metal or metal alloy with a coefficient of thermal expansion less than that of copper. There is sufficient copper or copper-base alloy present for the composite base to preferably have a coefficient of thermal expansion of at least 9.times.10.sup.-6/.degree. C. A ring frame formed from a nickel/iron-based alloy having a plurality of interconnections extending through sidewalls thereof is bonded to the composite base by a braze with a melting temperature in excess of 700.degree. C. In an alternative embodiment, the composite base brazed to a frame formed from a ceramic having a coefficient of thermal expansion in excess of 8.times.10.sup.-6/.degree. C.

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First Claim