Metal oxide integrated circuit on silicon germanium substrate
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United States of America Patent
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Mar 8, 2005
Issued Date -
N/A
app pub date -
Aug 28, 2003
filing date -
Dec 10, 1993
priority date (Note) -
Expired
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Abstract
Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes are 40 nm and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and a xylene exchange is performed just prior to spinning. The precursor is dried in air at a temperature of about 400.degree. C. and then furnace annealed in oxygen at a temperature of between 600.degree. C. and 850.degree. C.
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