Optimal spike anneal ambient
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United States of America Patent
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Oct 12, 2004
Grant Date -
Mar 25, 2004
app pub date -
Sep 20, 2002
filing date -
Sep 20, 2002
priority date (Note) -
Expired
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Abstract
A method for activating implanted dopants in a semiconductor substrate to form shallow junctions comprises the steps of: maintaining gas pressure in the processing chamber at a level significantly lower than atmospheric pressure, providing a flow of a carrier gas into the processing chamber, subjecting the substrate to a temperature treatment process, and introducing oxygen into the processing chamber during all or part of the temperature treatment process.
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