Method for preventing metal extrusion in a semiconductor structure.
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United States of America Patent
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Issued Date -
Mar 25, 2004
app pub date -
Aug 8, 2002
filing date -
Aug 8, 2002
priority date (Note) -
Abandoned
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Abstract
A method for preventing metal extrusion in a semiconductor structure is disclosed in this present invention. The point of this invention is that the first metal is suffered to a thermal process before the fabrication of a conformal glue layer into a via onto the first metal layer, and thus the first metal layer will not be extruded by thermal effect any more during the following processes. Therefore, this invention can provide a more efficient method for preventing metal extrusion in a semiconductor structure, and the phenomenon of the raising resistance caused by the metal extrusion can be avoided thereby.
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