Reverse blocking IGBT
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United States of America Patent
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N/A
Issued Date -
N/A
app pub date -
Feb 4, 2003
filing date -
Jul 31, 1995
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for forming a high voltage insulated gate bipolar transistor ('IGBT') includes providing a semiconductor substrate of first conductivity type. The semiconductor substrate includes a front-side surface, a backside surface, and a scribe region. The substrate further includes a plurality of active cells on the front-side surface. A drain region of second conductivity type is formed using a first impurity proximate the backside surface of the substrate. A continuous conductive region of second conductivity type is formed using a second impurity that has been provided into the substrate from the backside surface of the substrate. The continuous conductive region extends from the front-side surface to the backside surface. The second impurity has a higher mobility than the first impurity.
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