Vertical cavity surface emitting laser that uses intracavity degenerate four-wave mixing to produce phase-conjugated and distortion free collimated laser light
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United States of America Patent
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Apr 26, 2005
Grant Date -
Apr 8, 2004
app pub date -
Sep 22, 2003
filing date -
Jul 20, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor laser, such as surface emitting laser, is disclosed. According to one embodiment, the laser includes a first reflector assembly having an upper face, a second reflector assembly having a lower face that faces the upper face of the first reflector assembly, and a phase conjugator between the first and second reflector assemblies. The phase conjugator includes a first semiconductor active region parallel to the upper face of the first reflector assembly and the lower face of the second reflector assembly, a second semiconductor active region that is not parallel to first semiconductor active region, and a third semiconductor active region that is not parallel to the first semiconductor active region.
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