Atomic layer deposition and plasma treatment method for forming microelectronic capacitor structure with aluminum oxide containing dual dielectric layer
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United States of America Patent
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Oct 17, 2002
filing date -
Oct 17, 2002
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Abstract
Within a method for forming a capacitor within a microelectronic fabrication, there is employed a bilayer capacitor dielectric layer formed in part of an aluminum oxide dielectric material deposited employing an atomic layer deposition (ALD) method, and subsequently plasma treated. The aluminum oxide dielectric material deposited employing the atomic layer deposition (ALD) method and subsequently plasma treated provides for enhanced performance of the capacitor.
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