Methods for manufacturing semiconductor memory devices
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United States of America Patent
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Jun 1, 2004
Grant Date -
May 6, 2004
app pub date -
Apr 28, 2003
filing date -
Nov 4, 2002
priority date (Note) -
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Abstract
A lower electrode is formed from a first metal on a semiconductor substrate. Atoms of a second metal, that is different than the first metal, are diffused into the lower electrode. A dielectric layer is formed on the lower electrode, and an upper electrode is formed on the dielectric layer. Diffusion of second metal atoms into the lower electrode may reduce or prevent crystal grain growth and agglomeration on a surface of the lower electrode during a subsequent high temperature process.
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