Spatially modulated photodetectors
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United States of America Patent
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Issued Date -
May 13, 2004
app pub date -
Feb 21, 2003
filing date -
Nov 7, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A photodetector includes a first conductivity type semiconductor material (e.g., a p-type material) and one or more regions of semiconductor material of a second conductivity type (e.g., regions of n-type material), each forming a pn junction with the first conductivity type semiconductor material. The one or more regions collectively have a first layout area. One or more further regions of semiconductor material of the second conductivity type (e.g., further regions of n-type material) each form a pn junction with the first conductivity type semiconductor material. The one or more further regions collectively having a second layout area. A light blocking material covers the one or more further regions. The first layout area is greater than the second layout area.
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