Dielectric material compositions with high dielectric constant and low dielectric loss
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United States of America Patent
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May 30, 2006
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app pub date -
Jun 27, 2003
filing date -
Nov 8, 2002
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Abstract
A new dielectric material composition with high dielectric constant and low dielectric loss, which includes a quaternary metallic oxide having a pervoskite structure and represented by a general formula, Ba.sub.1-xM.sup.1.sub.xTi.sub.1-yM.sup.2.sub.yO.sub.m. It is suitable for Gbit memory devices, embedded capacitance devices in multilayered structures, and modulable capacitors for high frequency devices.
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