Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same
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United States of America Patent
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Feb 15, 2005
Grant Date -
Jun 10, 2004
app pub date -
Sep 23, 2003
filing date -
Sep 25, 2002
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Abstract
The object of the invention is to provide a semiconductor device having a nitride-based hetero-structure in which an epitaxial nitride film has a uniformly flat surface at a single molecule level, and a method of easily fabricating such a device. The object of the invention is achieved by providing a semiconductor device comprising a sapphire substrate whose c-surface is modified to be nitride-surfaced, GaN buffer layer, N polarity GaN layer, N polarity AlN layer, N polarity InN/InGaN multi-layered device structure, Al polarity AlN layer, and GaN cap layer.
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