Thermoelectric material using ZrNiSn-based half-Heusler structures
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United States of America Patent
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Issued Date -
Jun 17, 2004
app pub date -
Dec 12, 2002
filing date -
Dec 12, 2002
priority date (Note) -
Abandoned
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Abstract
The present invention provides a thermoelectric material made from the ZrNiSn-based, half-Heusler structure where Pd is alloyed on the site of Ni, Hf alloyed on Zr, and Sb doped on Sn, all in accordance with the formula Zr.sub.0 5Hf.sub.0.5Ni.sub.1-xPd.sub.xSn.sub.0.99Sb.sub.0 01. The structure significantly increases the value of the figure of merit (ZT) by decreasing the structure's thermal conductivity, without significant increases to its Seebeck coefficient.
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