Phase change memory

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6791102
APP PUB NO 20040113232A1
SERIAL NO

10319751

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a phase change material having a bottom portion, a lateral portion, and a top portion. The phase change memory may further include a first electrode material contacting the bottom portion and the lateral portion of the phase change material and a second electrode material contacting the top portion of the phase change material.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATION2200 MISSION COLLEGE BLVD SANTA CLARA CA 95054

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dennison, Charles H Santa Clara, CA 269 8651
Johnson, Brian G San Jose, CA 12 574

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