Bidirectional and vertical motion actuator and method for manufacturing the same
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United States of America Patent
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Issued Date -
Jun 24, 2004
app pub date -
Sep 8, 2003
filing date -
Sep 9, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for manufacturing a bidirectionally vertical motion actuator includes the steps of: providing a silicon-on-insulator (SOI) wafer, which comprises a first silicon wafer, an insulation layer on a top surface of the first silicon wafer, and a second silicon wafer; forming a dielectric layer on the SOI wafer by way of deposition; depositing a conductive layer on the dielectric layer; etching the conductive layer, the dielectric layer and the second silicon wafer simultaneously to form a proper top trench; and forming an anisotropic etching groove on a backside of the SOI wafer. A bidirectionally vertical motion actuator formed using the method is also disclosed.
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