Lithography process to reduce seam lines in an array of microelements produced from a sub-mask and a sub-mask for use thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 24, 2004
app pub date -
Sep 22, 2003
filing date -
Sep 20, 2002
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
A method and a mask have been optimized to reduce seam lines in replicated structures using lithographic processes. Multiple exposures and sweeps across a substrate using the mask results in the reduction of seam lines in the final developed photosensitive or micro formed structures.
Loading the Abstract Image...
OK
First Claim
Family
Loading Family data...
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully