Semiconductor device and manufacturing method thereof
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United States of America Patent
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May 2, 2006
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app pub date -
Dec 22, 2003
filing date -
Dec 27, 2002
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Abstract
A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.
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