Ceramic substrate for a semiconductor-production/inspection device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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N/A
Issued Date -
Jul 15, 2004
app pub date -
Dec 29, 2003
filing date -
Feb 7, 2000
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention provides a ceramic substrate which can keep a sufficiently large breakdown voltage even if the pore diameter of its maximum pore is 50 .mu.m or less to be larger than that of conventional ceramic substrates, can give a large fracture toughness value because of the presence of pores, can resist thermal impact, and can give a small warp amount at high temperature. The ceramic substrate of the present invention is a ceramic substrate for a semiconductor-producing/examining device having a conductor formed on a surface of the ceramic substrate or inside the ceramic substrate, wherein: the substrate is made of a non-oxide ceramic containing oxygen; and the pore diameter of the maximum pore thereof is 50 .mu.m or less.
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