Semiconductor device and method of fabricating the same
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United States of America Patent
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Jan 13, 2009
Grant Date -
Jul 22, 2004
app pub date -
Jul 24, 2003
filing date -
Aug 18, 1999
priority date (Note) -
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Abstract
. The volume of this portion increases and heat capacity becomes large, so that a cycle of temperature change by irradiation of a pulse laser beam to the island-like semiconductor layer becomes gentle (as compared with other thin portion). Like this, a laser beam is irradiated from the front side and reverse side of the substrate to directly heat the semiconductor layer, and heat conduction from the semiconductor layer to the side of the substrate and heat conduction of the semiconductor layer in the horizontal direction to the substrate are used, so that the increase in the size of the crystal grain is realized.
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