Agglomeration elimination for metal sputter deposition of chalcogenides
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United States of America Patent
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May 5, 2009
Grant Date -
Jul 29, 2004
app pub date -
Jan 16, 2004
filing date -
Mar 15, 2001
priority date (Note) -
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Abstract
A method for fabricating chalcogenide materials on substrates, which reduces and/or eliminates agglomeration of materials on the chalcogenide materials; and system and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method. One method disclosed includes forming a first layer, forming a second layer on the first layer, forming a third layer on the second layer, wherein the third layer is essentially transparent to irradiation, and irradiating the second layer through the third layer to cause the second layer to diffuse into the first layer thereby creating an integral layer of materials from the first and second layers.
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