Importance

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Abstract

A semiconductor wafer is made of a silicon substrate wafer and an epitaxial silicon layer deposited thereon. The substrate wafer has a specific resistance of 0.1 to 50 .OMEGA.cm, an oxygen concentration of less than 7.5*10.sup.17 atcm.sup.-3 and a nitrogen concentration of 1*10.sup.13 to 5*10.sup.15 atcm.sup.-3. The epitaxial layer is 0.2 to 1.0 .mu.m thick and has a surface on which fewer than 30 LLS (localized light scattering) defects which are greater in size than 0.085 .mu.m can be detected. A method for producing the semiconductor wafer has a sequence of steps for providing the substrate wafer with the aforementioned features; heating the substrate wafer in a deposition reactor to a deposition temperature of at least 1120.degree. C.; and depositing the epitaxial layer thereon with a thickness of 0.2 to 1.0 .mu.m, immediately after the deposition temperature has been reached.

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First Claim