Plasma processing equipment and plasma processing method

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United States of America Patent

SERIAL NO

10483185

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Abstract

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A plasma processing apparatus, comprising: at least, a processing chamber for plasma-processing an object to be processed; gas supply means for supplying a gas into the processing chamber; and high-frequency supplying means for forming the gas into a plasma state. The gas supply means has at least one gas introduction pipe, and the tip of the gas introduction pipe is placed in a position in the processing chamber, which is capable of preferred control of the gas dissociation. There are provided a plasma processing apparatus and a plasma processing method which can improve the uniformity in the gas which has been supplied into the processing chamber.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iwabuchi, Katsuhiko Tsukui-gun, JP 16 763
Kawakami, Satoru Nirasaki-shi, JP 64 1234
Matsuoka, Takaaki Minato-ku, JP 59 1036

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