Method of etching metallic materials to form a tapered profile
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United States of America Patent
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Issued Date -
Sep 2, 2004
app pub date -
Feb 28, 2003
filing date -
Feb 28, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of fabricating a structure having a tapered profile using a low temperature plasma etch (LTPE) process. In one embodiment, the LTPE process uses a gas comprising carbon tetrafluoride (CF.sub.4), trifluoromethane (CHF.sub.3), and nitrogen (N.sub.2) to fabricate the structure from a material layer of at least one of tantalum (Ta), tantalum nitride (TaN), and the like.
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